ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,138, issued on Sept. 1, was assigned to Semiconductor Manufacturing International (Beijing) Corp. (Beijing) and Semiconductor Manufacturing ... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,139, issued on Sept. 1, was assigned to Semiconductor Manufacturing Intemational (Shanghai) Corp. (Shanghai). "Semiconductor structure and ... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,140, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Layout pattern of static random-access memo... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,141, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Vertical gate-all-around (GAA) memo... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,142, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method for forming a SRAM memory ce... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,143, issued on Sept. 1, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Three-dimensional dynamic random access memory"... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,144, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Forming connect structures in memory systems"... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,145, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices" was invented b... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,146, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device" was invented... और पढ़ें
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,147, issued on Sept. 1, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device with oxide semiconductor layer for memory cells" was in... और पढ़ें